Figure: (a) 6 inch diamond coated silicon wafer at low temperature (250°C); (b) A cleaning step of a diamond coated silicon sample; (c)Cross-section scanning electron microscopy of a thick porous diamond layer (d) Boron-doped diamond Hall bar fabricated by microfabrication processes; (e) Epitaxial boron-doped diamond layer deposited on a (100) oriented HPHT single crystal.
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